ssf 1 020 d ? silikron semiconductor co.,ltd. 20 1 2 . 0 2 . 25 version : 2.2 page 1 of 8 www.silikron.com main product characteristics: features and benefits : description : a bsolute max rating : symbol parameter max. units i d @ tc = 25c continuous drain current, v gs @ 10v 6 0 a i d @ tc = 100c continuous drain current, v gs @ 10v 50 i dm pulsed drain current 240 p d @tc = 25c power dissipation 1 43 w linear derating f actor 2.0 w/c v ds drain - source voltage 10 0 v v gs gate - to - source voltage 2 0 v e as single pulse avalanche energy @ l=0.3mh 2 40 mj i as avalanche current @ l=0.3 mh 39 a t j t stg operating junction and storage temperature range - 55 to + 175 c v dss 10 0 v r ds (on) 1 6 m (typ . ) i d 6 0 a dpak marking and pin assignment schematic diagram ? advanced trench mosfet process technology ? special designed for pwm, load switching and general purpose applications ? u ltra low on - resistance with low gate charge ? f ast switching an d reverse body recovery ? 17 5 operating temperature it utilizes the latest trench processing techniques to ach ieve the high cell density and reduces the on - resistance with high repetitive avalanche rating . these features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications .
ssf 1020 d ? silikron semiconductor co.,ltd . 20 1 2 . 0 2 . 25 version : 2.2 page 2 of 8 www.silikron.com therm al resistance symbol characterizes typ. max. units r jc junction - to - case 1. 05 /w r j a junction - to - ambient 62 /w electrical characterizes @t a =25 unless otherwise specified symbol parameter min. typ. max . units conditions v ( b r) dss drain - to - source breakdown voltage 10 0 v v gs = 0v, id = 250a r ds(on) static drain - to - source on - resistance 1 6 20 m v gs =10v , i d = 30 a v gs(th) gate threshold voltage 2 .0 3.0 4 .0 v v ds = v gs , i d = 250a 2 .0 t j = 1 25 i dss drain - to - source leakage current 1 a v ds = 10 0 v,v gs = 0v 10 t j = 1 50 c i gss gate - to - source forward leakage 1 00 na v gs = 20 v - 1 00 v gs = - 20 v q g total gate charge 90 nc i d = 30 a , v ds = 30 v , v gs = 10v q gs gate - to - source charge 14 q gd gate - to - drain("miller") charge 24 t d( on) turn - on delay time 1 8.2 ns v gs =10v, vds= 30 v, r l = 15 , r gen = 2.5 t r rise time 1 5.6 t d(off) turn - off delay time 70.5 t f fall time 13.8 c iss input capacitance 3150 pf v gs = 0v v ds = 25 v ? = 1m hz c oss output capacitance 300 c rss reverse transfer capacitance 240 source - drain ratings and characteristics symbol parameter min. typ. max . units conditions i s continuous source current (body diode) 6 0 a mosfet symbol showing the integral reverse p - n junction diode. i sm pulsed source current ( body diode ) 24 0 a v sd diode forward voltage 1 .3 v i s = 30 a, v gs =0v t rr reverse recovery time 57 ns t j = 25c , i f = 60 a, di/dt = 10 0a/s q rr reverse recovery charge 107 nc
ssf 1020 d ? silikron semiconductor co.,ltd . 20 1 2 . 0 2 . 25 version : 2.2 page 3 of 8 www.silikron.com test circuits and waveforms switch waveforms: n otes : the maximum current rating is limited by bond - wires. repetitive rating; pulse width limited by max . junction temperature. the power dissipation pd is based on max. junction temperature , using junc tion - to - case thermal resistance . the value of r j a is measured with the device mounted on 1in 2 fr - 4 board with 2oz. copper, in a still air e nvironment with ta =25c these curves are based on the junction - to - case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =175c. the maximum current rating is limited by bond - wires.
ssf 1020 d ? silikron semiconductor co.,ltd . 20 1 2 . 0 2 . 25 version : 2.2 page 4 of 8 www.silikron.com t ypical electrical and thermal characteristics fig ure 1, transfer characteristic fig ure 2, cap ac i tance f ig ure 3, on resistance vs. junction temperature fig ure 4, breakdown voltage vs. junction temperature
ssf 1020 d ? silikron semiconductor co.,ltd . 20 1 2 . 0 2 . 25 version : 2.2 page 5 of 8 www.silikron.com fig ure 7 . saf e operation area fig ure 8 . max drain c urrent vs. junction temperature fig ure 9 . transient thermal impedance curve fig ure 5, gate charge fig ure 6, source - drain diode forward voltage
ssf 1020 d ? silikron semiconductor co.,ltd . 20 1 2 . 0 2 . 25 version : 2.2 page 6 of 8 www.silikron.com mechanical data min nom max min nom max a 2.200 2.300 2.380 0.087 0.091 0.094 a1 0.910 1.010 1.110 0.036 0.040 0.044 b 0.710 0.760 0.810 0.028 0.030 0.032 b1 5.130 5.330 5.460 0.202 0.210 0.215 c 0.460 0.510 0.560 0.018 0.020 0.022 d 6.000 6.100 6.200 0.236 0.240 0.244 d1 d2 e 6.500 6.600 6.700 0.256 0.260 0.264 e1 e 2.186 2.286 2.386 0.086 0.090 0.094 h 9.800 10.100 10.400 0.386 0.398 0.409 f 1.400 1.500 1.700 0.055 0.059 0.067 k v2 5.350 (ref) 2.900 (ref) 1.600 (ref) 8 0 (ref) 8 0 (ref) 0.063 (ref) 0.211 (ref) 0.114 (ref) symbol dimension in millimeters dimension in inches 4.83 (ref) 0.190 (ref) dpak package outline dimension
ssf 1020 d ? silikron semiconductor co.,ltd . 20 1 2 . 0 2 . 25 version : 2.2 page 7 of 8 www.silikron.com ordering and marking information device marking: ssf 1020 d package (available) dpak operating temperature range c : - 55 to 175 oc devices per unit option1 package type units/ tube tubes/inner box units/inner box inner boxes/carton box units/carton bo x to - 252 80 50 4000 10 40 000 option2 units/ tape tape s/inner box units/inner box inner boxes/carton box units/carton box to - 2 52 2500 2 5000 7 35000 option 3 units/ tape tape s/inner box units/inner box inner boxes/carton box uni ts/carton box to - 2 52 2500 1 25 00 10 25 000 reliability test program test item conditions duration sample size high temperature reverse bias(htrb) t j =125 to 175 @ 80% of max v dss /v ces /vr 168 hours 500 hours 1000 hours 3 lots x 77 devices high tempera ture gate bias(htgb) t j =150 or 175 @ 100% of max v gss 168 hours 500 hours 1000 hours 3 lots x 77 devices
ssf 1020 d ? silikron semiconductor co.,ltd . 20 1 2 . 0 2 . 25 version : 2.2 page 8 of 8 www.silikron.com attention: any and all silikron products described or contained herein do not have specifications that can handle applications that require ext remely high levels of reliability, such as life - support systems, aircraft's control systems, or other ap plications whose failure can be reasonably exp ected to result in serious physical and/or material damage. consult with your silikron representative nea rest you before using any silikron products described or contained herein in such applications. silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all silikron products described or contained herein. specifications of any and all silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customers products or equipment. to verify s ymptoms and states that cannot be evaluated in an independent device, th e customer should a lways evaluate and test devices mounted in the customers products or equipment. silikron semiconductor co.,ltd. strives to supply high - quality high - reliability products. however, any and all semiconductor products fail with some probability. it is pos sible that these probabilistic failures could give rise to accident s or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that th ese kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all silikron products(inclu ding technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accorda nce with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of silikron semiconductor co.,ltd. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. silikron believes information herein is accurate and re liable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. any and all information described or contained herein are subject to change without notice due to pr oduct/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the silikron product that you intend to use. this catalog provides information as of dec, 2008. specifications and information herein are subject to change without notice. customer service worldwide sales and service : sales@ silikron .com technical support: technical@ silikron .com suzhou silikron semiconductor corp. building 11a suchun industrial square, 428# xinglong street, suzhou p.r. chin a tel: (86 - 512 ) 62560688 fax: (86 - 512) 65160705 e - mail: sales@ silikron .com
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